T35 DC and Switching Characteristics

Table 1. Absolute Maximum Ratings Conditions beyond those listed may cause permanent damage to the device. Device operation at the absolute maximum ratings for extended periods of time has adverse effects on the device.
Symbol Description Min Max Units
VCC Core power supply -0.5 1.42 V
VCCIO I/O bank power supply -0.5 4.6 V
VCCA_PLL PLL analog power supply -0.5 1.42 V
VCCIO_DDR DDR power supply -0.5 1.65 V
VCC25A_MIPI0
VCC25A_MIPI1
 2.5 V analog power supply for MIPI -0.5 2.75 V
VCC12A_MIPI0_TX
VCC12A_MIPI1_TX
 1.2 V TX analog power supply for MIPI -0.5 1.42 V
VCC12A_MIPI0_RX
VCC12A_MIPI1_RX
 1.2 V RX analog power supply for MIPI -0.5 1.42 V
VIN I/O input voltage -0.5 4.6 V
IIN Maximum current through any pin in a powered or unpowered bank when forward biasing the clamp diode.2 – 10 mA
TJ Operating junction temperature -40 125 °C
TSTG Storage temperature, ambient -55 150 °C
Table 2. Recommended Operating Conditions (C3, C4, and I4 Speed Grades)1
Symbol Description Min Typ Max Units
VCC Core power supply 1.15 1.2 1.25 V
VCCIO 1.8 V I/O bank power supply 1.71 1.8 1.89 V
2.5 V I/O bank power supply 2.38 2.5 2.63 V
3.3 V I/O bank power supply 3.14 3.3 3.47 V
VCCIO_DDR DDR3 1.425 1.5 1.575 V
DDR3L 1.283 1.35 1.45 V
LPDDR3 1.14 1.2 1.3 V
LPDDR2 1.14 1.2 1.3 V
VCCA_PLL PLL analog power supply 1.15 1.2 1.25 V
VCC25A_MIPI0
VCC25A_MIPI1
 2.5 V analog power supply for MIPI 2.38 2.5 2.63 V
VCC12A_MIPI0_TX
VCC12A_MIPI1_TX
 1.2 V TX analog power supply for MIPI 1.15 1.2 1.25 V
VCC12A_MIPI0_RX
VCC12A_MIPI1_RX
 1.2 V RX analog power supply for MIPI 1.15 1.2 1.25 V
VIN I/O input voltage3 -0.3 – VCCIO + 0.3 V
TJCOM Operating junction temperature, commercial 0 – 85 °C
TJIND Operating junction temperature, industrial -40 – 100 °C
Table 3. Recommended Operating Conditions (C4L and I4L Speed Grades) 1
Symbol Description Min Typ Max Units
VCC Core power supply 1.05 1.1 1.15 V
VCCIO 1.8 V I/O bank power supply 1.71 1.8 1.89 V
2.5 V I/O bank power supply 2.38 2.5 2.63 V
3.3 V I/O bank power supply 3.14 3.3 3.47 V
VCCIO_DDR DDR3 1.425 1.5 1.575 V
DDR3L 1.283 1.35 1.45 V
LPDDR3 1.14 1.2 1.3 V
LPDDR2 1.14 1.2 1.3 V
VCCA_PLL PLL analog power supply 1.05 1.1 1.15 V
VCC25A_MIPI0
VCC25A_MIPI1
 2.5 V analog power supply for MIPI 2.38 2.5 2.63 V
VCC12A_MIPI0_TX
VCC12A_MIPI1_TX
 1.2 V TX analog power supply for MIPI 1.05 1.1 1.15 V
VCC12A_MIPI0_RX
VCC12A_MIPI1_RX
 1.2 V RX analog power supply for MIPI 1.05 1.1 1.15 V
VIN I/O input voltage4 -0.3 – VCCIO + 0.3 V
TJCOM Operating junction temperature, commercial 0 – 85 °C
TJIND Operating junction temperature, industrial -40 – 100 °C
Table 4. Power Supply Ramp Rates
Symbol Description Min Max Units
tRAMP Power supply ramp rate for all supplies. VCCIO/10 10 V/ms
Table 5. Single-Ended I/O DC Electrical Characteristics
I/O Standard VIL (V) VIH (V) VOL (V) VOH (V)
Min Max Min Max Max Min
3.3 V LVCMOS -0.3 0.8 2 VCCIO + 0.3 0.2 VCCIO - 0.2
3.3 V LVTTL -0.3 0.8 2 VCCIO + 0.3 0.4 2.4
2.5 V LVCMOS -0.3 0.7 1.7 VCCIO + 0.3 0.5 1.8
1.8 V LVCMOS -0.3 0.35 * VCCIO 0.65 * VCCIO VCCIO + 0.3 0.45 VCCIO - 0.45
Table 6. Single-Ended I/O and Dedicated Configuration Pins Schmitt Trigger Buffer Characteristic
Voltage (V) VT+ (V) Schmitt Trigger Low-to-High Threshold VT- (V) Schmitt Trigger High-to-Low Threshold Input Leakage Current (μA) Tri-State Output Leakage Current (μA)
3.3 1.73 1.32 ±10 ±10
2.5 1.37 1.01 ±10 ±10
1.8 1.05 0.71 ±10 ±10
Table 7. Single-Ended I/O Buffer Drive Strength CharacteristicsJunction temperature at TJ = 25 °C, power supply at nominal voltage.
CDONE has a drive strength of 1.
I/O Standard 3.3 V 2.5 V 1.8 V
Drive Strength IOH (mA) IOL (mA) IOH (mA) IOL (mA) IOH (mA) IOL (mA)
1 14.4 8.0 9.1 8.0 5.1 4.4
2 19.1 10.5 12.2 10.5 6.8 5.8
3 23.9 13.3 15.2 13.4 8.6 7.3
4 28.7 15.8 18.2 15.9 10.3 8.6
Table 8. Single-Ended I/O Internal Weak Pull-Up and Pull-Down ResistanceCDONE and CRESET_N also have an internal weak pull-up with these values.
I/O Standard Internal Pull-Up Internal Pull-Down Units
Min Typ Max Min Typ Max
3.3 V LVTTL/LVCMOS 27 40 65 30 47 83 kΩ
2.5 V LVCMOS 35 55 120 37 62 118 kΩ
1.8 V LVCMOS 70 90 200 80 99 300 kΩ
Table 9. LVDS Pins Configured as Single-Ended I/O DC Electrical Characteristics
I/O Standard VIL (V) VIH (V) VOL (V) VOH (V)
Min Max Min Max Max Min
3.3 V LVCMOS -0.3 0.8 2 VCCIO + 0.3 0.2 VCCIO - 0.2
3.3 V LVTTL -0.3 0.8 2 VCCIO + 0.3 0.4 2.4
2.5 V LVCMOS -0.3 0.7 1.7 VCCIO + 0.3 0.5 1.8
1.8 V LVCMOS -0.3 0.35 * VCCIO 0.65 * VCCIO VCCIO + 0.3 0.45 VCCIO - 0.45
Table 10. LVDS Pins Configured as Single-Ended I/O DC Electrical Characteristics
Voltage (V) Input Leakage Current (μA) Tri-State Output Leakage Current (μA)
3.3 ±10 ±10
Table 11. LVDS Pins Configured as Single-Ended I/O Buffer Drive Strength CharacteristicsJunction temperature at TJ = 25 °C, power supply at nominal voltage.
I/O Standard 3.3 V 2.5 V 1.8 V
Drive Strength IOH (mA) IOL (mA) IOH (mA) IOL (mA) IOH (mA) IOL (mA)
1 14.4 8.0 9.1 8.0 5.1 4.4
2 19.1 10.5 12.2 10.5 6.8 5.8
3 23.9 13.3 15.2 13.4 8.6 7.3
4 28.7 15.8 18.2 15.9 10.3 8.6
Table 12. LVDS Pins Configured as Single-Ended I/O Internal Weak Pull-Up Resistance
I/O Standard Internal Pull-Up Units
Min Typ Max
3.3 V LVTTL/LVCMOS 27 40 65 kΩ
2.5 V LVCMOS 35 55 95 kΩ
1.8 V LVCMOS 53 90 167 kΩ
Table 13. Single-Ended I/O and LVDS Pins Configured as Single-Ended I/O Rise and Fall TimeData are based on the following IBIS simulation setup:
  • Weakest drive strength model
  • Typical simulation corner setting
  • RLC circuit with 6.6 pF capacitance, 16.6 nH inductance, 0.095 ohm resistance, and 25 °C temperature
Note: For a more accurate data, you need to perform the simulation with your own circuit.
I/O Standard Rise Time (TR) Fall Time (TF) Units
Slow Slew Rate Enabled Slow Slew Rate Disabled Slow Slew Rate Enabled Slow Slew Rate Disabled
3.3 V LVTTL/LVCMOS 1.13 1.02 1.24 1.17 ns
2.5 V LVCMOS 1.4 1.3 1.44 1.31 ns
1.8 V LVCMOS 2.14 2.01 2.05 1.85 ns
LVDS pins configured as 3.3 V LVTTL/LVCMOS 0.45 0.44 ns
Table 14. Maximum Toggle RateEfinix recommends that you perform simulations using the IBIS model to determine the maximum toggle rate for your design.
I/O Standard Max Toggle Rate Units
3.3 V LVTTL/LVCMOS 400 Mbps
2.5 V LVCMOS 400 Mbps
1.8 V LVCMOS 400 Mbps
LVDS 800 Mbps
Table 15. Block RAM Characteristics
Symbol Description Speed Grade Units
C3, C4L, I4L C4, I4
fMAX Block RAM maximum frequency. 310 400 MHz
Table 16. Multiplier Block Characteristics
Symbol Description Speed Grade Units
C3, C4L, I4L C4, I4
fMAX Multiplier block maximum frequency. 310 400 MHz
1 Supply voltage specification applied to the voltage taken at the device pins with respect to ground, not at the power supply.
2 Should not exceed a total of 120 mA per bank.
3 Values applicable to both input and tri-stated output configuration.
4 Values applicable to both input and tri-stated output configuration.