Tz200 DC and Switching Characteristics

Table 1. Absolute Maximum Ratings1 Conditions beyond those listed may cause permanent damage to the device. Device operation at the absolute maximum ratings for extended periods of time has adverse effects on the device.
Symbol Description Min Max Units
VCC Core power supply. -0.5 1.05 V
VCCA PLL analog power supply. -0.5 1.05 V
VDD_SOC Hardened RISC-V block power supply. -0.5 1.05 V
VCCAUX 1.8 V auxiliary power supply. -0.5 1.98 V
VQPS 1.8 V security fuse supply. -0.5 1.98 V
VCCIO HSIO bank power supply. -0.5 1.98 V
VCCIO33 HVIO bank power supply. -0.5 3.63 V
VCC18A_MIPI_TX 1.8 V TX analog power supply for MIPI TX. -0.5 1.98 V
VCC18A_MIPI_RX 1.8 V TX analog power supply for MIPI RX. -0.5 1.98 V
VDD_PHY LPDDR4 digital power supply. -0.5 1.05 V
VDDPLL_MCB_TOP_PHY LPDDR4 PLL power supply. -0.5 1.05 V
VDDQ_PHY LPDDR4 I/O power supply. -0.5 1.21 V
VDDQX_PHY LPDDR4 I/O pre-driver power supply. -0.5 1.21 V
VDDQ_CK_PHY LPDDR4 I/O power supply for clock. -0.5 1.21 V
VCC_SERDES Transceiver digital PCS and PCIe controller power supplies. -0.5 1.05 V
VDDA_C_Q Transceiver analog bias power supply. -0.5 1.05 V
VDDA_D_Q Transceiver digital and analog data path power supplies. -0.5 1.05 V
VDDA_H_Q Transceiver analog power supply for I/O. -0.5 1.98 V
IIN Maximum current allowed through any I/O pin when the device is not turned on or during power-up/down.2 – 10 mA
VIN HVIO input voltage. -0.5 3.63 V
HSIO input voltage. -0.5 1.98 V
TJ Operating junction temperature. -40 125 °C
TSTG Storage temperature, ambient. -55 150 °C
Table 2. Recommended Operating Conditions 1
Symbol Description Min Typ Max Units
VCC Core power supply. 0.92 0.95 0.98 V
VCCA PLL analog power supply. 0.92 0.95 0.98 V
VDD_SOC Hardened RISC-V block power supply. 0.92 0.95 0.98 V
VCCAUX 1.8 V auxiliary power supply. 1.75 1.8 1.85 V
VQPS 1.8 V security fuse supply. 1.71 1.8 1.89 V
VCCIO 1.2 V HSIO bank power supply. 1.14 1.2 1.26 V
1.35 V HSIO bank power supply 1.283 1.35 1.417 V
1.5 V HSIO bank power supply. 1.425 1.5 1.575 V
1.8 V HSIO bank power supply. 1.71 1.8 1.89 V
VCCIO33 1.8 V HVIO bank power supply. 1.71 1.8 1.89 V
2.5 V HVIO bank power supply. 2.375 2.5 2.625 V
3.0 V HVIO bank power supply. 2.85 3.0 3.15 V
3.3 V HVIO bank power supply. 3.135 3.3 3.465 V
VCC18A_MIPI_TX 1.8 V analog power supply for MIPI TX. 1.71 1.8 1.89 V
VCC18A_MIPI_RX 1.8 V analog power supply for MIPI RX. 1.71 1.8 1.89 V
VDD_PHY LPDDR4 digital power supply. 0.82 0.85 0.88 V
VDDPLL_MCB_TOP_PHY LPDDR4 PLL power supply. 0.82 0.85 0.88 V
VDDQ_PHY LPDDR4 I/O power supply. 1.06 1.1 1.17 V
VDDQX_PHY LPDDR4 I/O pre-driver power supply. 1.06 1.1 1.17 V
VDDQ_CK_PHY LPDDR4 I/O power supply for clock. 1.06 1.1 1.17 V
VCC_SERDES Transceiver digital PCS and PCIe controller power supplies. 0.82 0.85 0.88 V
VDDA_C_Q Transceiver analog bias power supply. 0.82 0.85 0.88 V
VDDA_D_Q Transceiver digital and analog data path power supplies. 0.82 0.85 0.88 V
VDDA_H_Q Transceiver analog power supply 1.71 1.8 1.89 V
Transceiver analog power supply (for low power) 1.425 1.5 1.575 V
TJCOM Operating junction temperature, commercial. 0 – 85 °C
TJIND Operating junction temperature, industrial. -40 – 100 °C
Table 3. Power Supply Ramp Rates
Symbol Description Min Max Units
tRAMP Power supply ramp rate for all supplies.
0.1 * Vsupply
 10 V/ms
Table 4. HVIO DC Electrical Characteristics
I/O Standard VIL (V) VIH (V) VOL (V) VOH (V)
Min Max Min Max Max Min
3.3 V LVCMOS -0.3 0.8 2.1 3.465 0.2 VCCIO33 - 0.2
3.0 V LVCMOS -0.3 0.8 2.1 3.15 0.2 VCCIO33 - 0.2
3.3 V LVTTL -0.3 0.8 2.1 3.465 0.4 2.4
3.0 V LVTTL -0.3 0.8 2.1 3.15 0.4 2.4
2.5 V LVCMOS -0.3 0.45 1.7 2.625 0.4 2.0
1.8 V LVCMOS -0.3 0.58 1.27 1.89 0.45 VCCIO33 - 0.45
Table 5. HVIO DC Electrical Characteristics
Voltage (V) Typical Hysteresis (mV)3 Input Leakage Current (μA) Tristate Output Leakage Current (μA)
3.3 250 ±25 ±10
2.5 250 ±25 ±10
1.8 200 ±25 ±10
Table 6. HSIO Pins Configured as Single-Ended I/O DC Electrical Characteristics
I/O Standard VIL (V) VIH (V) VOL (V) VOH (V)
Min Max Min Max Max Min
1.8 V LVCMOS -0.3 0.58 1.27 1.89 0.45 VCCIO - 0.45
1.5 V LVCMOS -0.3 0.35 * VCCIO 0.65 * VCCIO 1.575 0.25 * VCCIO 0.75 * VCCIO
1.2 V LVCMOS -0.3 0.35 * VCCIO 0.65 * VCCIO 1.26 0.25 * VCCIO 0.75 * VCCIO
1.8 V HSTL – VREF - 0.1 VREF + 0.1 – 0.4 VCCIO - 0.4
1.5 V HSTL – VREF - 0.1 VREF + 0.1 – 0.4 VCCIO - 0.4
1.2 V HSTL -0.15 VREF - 0.08 VREF + 0.08 VREF + 0.15 0.25 * VCCIO 0.75 * VCCIO
1.8 V SSTL -0.3 VREF - 0.125 VREF + 0.125 VCCIO + 0.3 VTT - 0.603 VTT + 0.603
1.5 V SSTL – VREF - 0.1 VREF + 0.1 – 0.2 * VCCIO 0.8 * VCCIO
1.35 V SSTL – VREF - 0.1 VREF + 0.1 – 0.2 * VCCIO 0.8 * VCCIO
1.2 V SSTL – VREF - 0.1 VREF + 0.1 – 0.2 * VCCIO 0.8 * VCCIO
Table 7. HSIO Pins Configured as Single-Ended I/O DC Electrical Characteristics
I/O Standard VREF (V) Vtt (V)
Min Typ Max Min Typ Max
1.8 V HSTL 0.85 0.9 0.95 – 0.5 * VCCIO –
1.5 V HSTL 0.68 0.75 0.9 – 0.5 * VCCIO –
1.2 V HSTL 0.47 * VCCIO 0.5 * VCCIO 0.53 * VCCIO – 0.5 * VCCIO –
1.8 V SSTL 0.833 0.9 0.969 VREF - 0.04 VREF VREF + 0.04
1.5 V SSTL 0.49 * VCCIO 0.5 * VCCIO 0.51 * VCCIO 0.49 * VCCIO 0.5 * VCCIO 0.51 * VCCIO
1.35 V SSTL 0.49 * VCCIO 0.5 * VCCIO 0.51 * VCCIO 0.49 * VCCIO 0.5 * VCCIO 0.51 * VCCIO
1.2 V SSTL 0.49 * VCCIO 0.5 * VCCIO 0.51 * VCCIO 0.49 * VCCIO 0.5 * VCCIO 0.51 * VCCIO
Table 8. HSIO Pins Configured as Differential SSTL I/O Electrical Characteristics
I/O Standard VSWING (DC) (V) VX(AC) (V) VSWING (AC) (V)
Min Max Min Typ Max Min Max
1.8 V SSTL 0.25 VCCIO + 0.6 VCCIO/2 – 0.175 – VCCIO/2 + 0.175 0.5 VCCIO + 0.6
1.5 V SSTL 0.2 – VCCIO/2 – 0.15 – VCCIO/2 + 0.15 0.35 –
1.35 V SSTL 0.2 – VCCIO/2 – 0.15 – VCCIO/2 + 0.15 0.35 –
1.2 V SSTL 0.18 – VREF– 0.15 VCCIO /2 VREF + 0.15 -0.3 0.3
Table 9. HSIO Pins Configured as Differential HSTL I/O Electrical Characteristics
I/O Standard VDIF (DC) (V) VX (AC) (V) VCM (DC) (V) VDIF (AC) (V)
Min Max Min Typ Max Min Typ Max Min Max
1.8 V HSTL 0.2 – 0.78 – 1.12 0.78 – 1.12 0.4 –
1.5 V HSTL 0.2 – 0.68 – 0.9 0.68 – 0.9 0.4 –
1.2 V HSTL 0.16 VCCIO + 0.3 – 0.5 * VCCIO – 0.4 * VCCIO 0.5 * VCCIO 0.6 * VCCIO 0.3 VCCIO + 0.48
Table 10. HSIO Pins Configured as Single-Ended I/O DC Electrical Characteristics
Voltage (V) Typical Hysteresis (mV)4 Input Leakage Current (μA) Tristate Output Leakage Current (μA)
1.8 200 ±25 ±10
1.5 160 ±25 ±10
1.35 – ±25 ±10
1.2 140 ±25 ±10
Table 11. Supported HVIO Drive Strength
I/O Standard Drive Strength Units
3.3 V LVTTL 4, 8, 12, 16 mA
3.3 V LVCMOS 2, 4, 6, 8 mA
3.0 V LVTTL 4, 8, 12, 16 mA
3.0 V LVCMOS 2, 4, 6, 8 mA
2.5 V LVCMOS 4, 8, 12, 16 mA
1.8 V LVCMOS 4, 8, 12, 16 mA
Table 12. Supported HSIO Drive Strength
I/O Standard Drive Strength Units
1.8 V LVCMOS 4, 8, 12, 16 mA
1.5 V LVCMOS 4, 8, 12, 16 mA
1.2 V LVCMOS 2, 4, 8, 12 mA
1.8 V SSTL 4, 8, 10, 12 mA
1.5 V SSTL 4, 8, 10, 12 mA
1.35 V SSTL 4, 8, 10, 12 mA
1.2 V SSTL 4, 8, 10, 12 mA
1.8 V HSTL 4, 8, 10, 12 mA
1.5 V HSTL 4, 8, 10, 12 mA
1.2 V HSTL 4, 8, 10, 12 mA
Table 13. Maximum Toggle Rate
I/O I/O Standard Speed Grade Serialization Mode Max Toggle Rate (Mbps)56
HVIO 3.0 V, 3.3 V LVTTL
3.0 V, 3.3 V LVCMOS
 All – 200
HVIO 2.5 V LVCMOS All – 100
HVIO 1.8 V LVCMOS All – 400
HSIO 1.8 V, 1.5 V, 1.2 V LVCMOS All – 400
HSIO 1.8 V, 1.5 V, 1.35 V, 1.2 V SSTL
1.8 V, 1.5 V, 1.2 V HSTL
 All – 800
HSIO LVDS C3, I3 Full-rate 850
Half-rate 1,300
C2, I2 Full-rate 720
Half-rate 1,100
HSIO Sub-LVDS C3, I3 Full-rate 850
Half-rate 1,100
C2, I2 Full-rate 720
Half-rate 1,100
HSIO MIPI lane C3, I3 – 1,300
C2, I2 – 1,100
Table 14. HVIO Internal Weak Pull-Up and Pull-Down Resistance
I/O Standard Internal Pull-Up Internal Pull-Down Units
Min Typ Max Min Typ Max
3.3 V LVTTL/LVCMOS 25 42 67 24 29 33 kΩ
3.0 V LVTTL/LVCMOS 25 42 67 24 29 33 kΩ
2.5 V LVCMOS 25 42 67 24 29 33 kΩ
1.8 V LVCMOS 25 35 45 24 29 33 kΩ
Table 15. HSIO Internal Weak Pull-Up and Pull-Down ResistanceCDONE and CRESET_N also have an internal weak pull-up with these values.
I/O Standard Internal Pull-Up Internal Pull-Down Units
Min Typ Max Min Typ Max
1.8 V LVCMOS, HSTL, SSTL 18 27 47 18 27 47 kΩ
1.5 V LVCMOS, HSTL, SSTL 22 38 65 22 38 65 kΩ
1.35 V SSTL 30 52 100 30 52 100 kΩ
1.2 V LVCMOS, HSTL, SSTL 40 66 135 40 66 135 kΩ
Table 16. Single-Ended I/O Programmable Delay Chain Step Size: Static
Speed Grade Delay per Step Units
Min Typ Max
All 35 55 75 ps
Table 17. Single-Ended I/O Programmable Delay Chain Step Size: Dynamic
Speed Grade Delay per Step Units
Min Typ Max
All 12 18 24 ps
Table 18. Differential I/O Programmable Delay Chain Step Size: Static and Dynamic
Speed Grade Delay per Step Units
Min Typ Max
All 12 23 30 ps
Table 19. Block RAM, DSP Block, Gobal Clock Buffer, DPA, and RISC-V Performance
Description Speed Grade Units
C3, I3 C2, I2
Block RAM maximum frequency. 850 720 MHz
DSP block maximum frequency. 850 720 MHz
Global clock buffer block maximum frequency. 850 720 MHz
DPA maximum data rate. 850 720 Mbps
Hardened RISC-V block maximum system clock. 800 700 MHz
Hardened RISC-V block memory clock (pipe mode) 200 180 MHz
Hardened RISC-V block memory clock (non-pipe mode) 200 150 MHz
Table 20. MIPI D-PHY Interface Performance
Description Speed Grade Units
C3, I3 C2, I2
MIPI D-PHY block maximum data rate. 2.0 1.8 Gbps
Table 21. LPDDR4 Interface Performance
Description Speed Grade Units
C3, I3 C2, I2
LPDDR4 DRAM interface maximum data rate. 2.4 1.866 Gbps
Table 22. VIH, VIL, VOL, and VOH Specifications for LPDDR4
VIL (V) VIH (V) VOL (V) VOH (V)
Min Max Min Max Max Min
– (VDDQ_PHY / 6) - 0.075 (VDDQ_PHY / 6) + 0.075 – VDDQ_PHY * 0.1 VDDQ_PHY * 0.5
1 Supply voltage specification applied to the voltage taken at the device pins with respect to ground, not at the power supply.
2 Should not exceed a total of 100 mA per bank
3 For input pins with Schmitt Trigger enabled
4 For LVCMOS input pins with Schmitt Trigger enabled
5 The maximum toggle rate is dependent on the drive strength and external load conditions. Perform IBIS simulation to determine the optimal drive strength setting to achieve the targeted toggle rate.
6 All I/O standards are characterized with 5 pF load, except for LVTTL and LVCMOS standards which are characterized with 15 pF load.